Semiconductor integrated circuit formed on an insulator substrate
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United States of America Patent
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-
Feb 7, 1989
Issued Date -
N/A
app pub date -
Feb 19, 1986
filing date -
Aug 22, 1977
priority date (Note) -
Expired
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Abstract
A semiconductor integrated circuit formed on an insulator substrate and comprising a drive transistor and a load transistor, in which a threshold voltage of the load transistor is set in the range of -2.8V to -1.0V so as to ensure stable operation without temperature dependency with respect to working speed and power consumption of the circuit.
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