Schottky gate field effect transistor and manufacturing method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 7, 1989
Issued Date -
N/A
app pub date -
Feb 17, 1987
filing date -
Nov 2, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a GaAs field effect transistor of the invention, a gate layer is formed on a semi-insulative substrate. The gate layer is made of a conductive material forming a Schottky junction between the substrate and the gate layer. Source and drain regions are formed in the substrate to have a first conductivity type. Barrier layers are formed in the substrate to have a second conductivity type. The barrier layers are formed to surround the source and drain regions, and suppress a current component from leaking from the source and drain regions to the substrate when the field effect transistor is operative.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully