Bipolar power transistor having bypassable incorporated-base ballast resistance
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United States of America Patent
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Jan 24, 1989
Grant Date -
N/A
app pub date -
May 8, 1984
filing date -
May 16, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The ballast resistance of the base of a bipolar power transistor is realized by a localized pinching of the base region by means of a special diffused region. A surface metallization brings the diffused region into contact with the adjacent base region so that a diode is formed in parallel with the base ballast resistance. The diode becomes conductive when the voltage drop across the resistance which is generated by the base current of the transistor exceeds the conduction threshold of the junction, thereby bypassing the ballast resistance.
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