Arsenate dopant sources and method of making the sources
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 17, 1989
Grant Date -
N/A
app pub date -
Jun 8, 1983
filing date -
Jun 8, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500.degree.-1400.degree. C. to release As.sub.2 O.sub.5, As.sub.2 O.sub.3 and/or elemental arsenic vapors for transport to semiconductor elements as a controlled dopant.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully