Refractory metal deposition process
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United States of America Patent
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Dec 27, 1988
Issued Date -
N/A
app pub date -
Oct 22, 1987
filing date -
Sep 4, 1980
priority date (Note) -
Expired
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Abstract
Process for depositing tungsten or other refractory metals on semiconductor devices by a reaction of a gas containing the metal in a vapor deposition reactor. The reaction occurs at relatively low temperature (240.degree.-400.degree. C.) and pressure (0.1-10 torr), and the resulting film adheres differently to different substrate materials. Patterned coatings can be made without the patterning steps which are required with prior art techniques.
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