Subchannel doping to reduce short-gate effects in field effect transistors
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United States of America Patent
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Nov 29, 1988
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N/A
app pub date -
Sep 24, 1986
filing date -
Sep 24, 1986
priority date (Note) -
Expired
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Abstract
One embodiment of a process in accordance with our invention includes the step of forming a P type region on a semiconductor substrate. After the P type region is formed, an N type layer is epitaxially grown on the P type region. A Schottky gate is then formed on the N type epitaxial layer. A first portion of the epitaxial layer serves as a transistor source, a second portion of the epitaxial layer serves as the transistor drain, and a third portion of the epitaxial layer serves as the channel. Of importance, the P type semiconductor region helps prevent various short channel effects caused when current carriers flowing between the source and drain flow too far from the Schottky gate.
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