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Abstract

An absorbent and process for removing materials for semiconductor products, such as SiH.sub.4, B.sub.2 H.sub.6, SeH.sub.2, AsH.sub.3, PH.sub.3, GeH.sub.4, SiH.sub.2 Cl.sub.2, SiHCl.sub.3, (CH.sub.3).sub.3 Al, (CH.sub.3).sub.3 Ga, etc. from a gas containing above toxic components. The absorbent includes a first and second dry absorbent. The first absorbent induces a solid carrier containing a large proportion of a porous inorganic silicate and impregnated with an aqueous solution of an alkali. The second absorbent has a solid carrier, similar to that in the first absorbent, being impregnated with an aqueous solution of an alkali and an aqueous solution of an oxidizing agent capable of oxidizing germane. When used separately, these two absorbent are not capable of treating certain volatile inorganic hydrides or lose their capacity of absorption in a relatively short period for such hydrides. In order to fully treat a gas containing such toxic components, a third absorbent which also includes a porous solid carrier being impregnated with an aqueous solution of an oxidizing agent incapable of oxidizing germane may be added to the above first and second absorbents. The processe include appropriate combination of all or two of these absorbents performs an excellent treatment of a gas containing any compounds used for manufacturing semiconductors in two or three stages of the treatment.

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