P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 4, 1988
Grant Date -
N/A
app pub date -
Jul 27, 1987
filing date -
Jul 27, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.
Loading the Abstract Image...
OK
First Claim
Family
Loading Family data...
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully