Multilayer semiconductor device having an amorphous carbon and silicon layer
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United States of America Patent
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Aug 30, 1988
Issued Date -
N/A
app pub date -
Oct 2, 1986
filing date -
Jan 20, 1984
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Expired
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Abstract
In the typical embodiments of the invention described in the specification, a radiation detector has a single crystal silicon substrate coated with an amorphous semiconductor film containing silicon and carbon, metal electrodes being provided. Amorphous layers are formed by a plasma CVD method using mixtures of monosilane gas and acetylene or tetrafluorocarbon gas at a pressure of 10 Torr with an applied voltage of 400-800 volts providing increased band gaps and higher resistivity to reduce current leakage.
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