Thin oxide fuse
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United States of America Patent
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Jul 12, 1988
Grant Date -
N/A
app pub date -
Apr 7, 1986
filing date -
Apr 7, 1986
priority date (Note) -
Expired
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Abstract
An oxide fuse, and method of forming same, formed by a thin layer of oxide dielectric between a lower electrode substrate and an upper electrode. A fuse-programming bias of approximately 15V causes Fowler-Nordheim tunneling at low temperature to damage the dielectric layer, and shorts the upper and lower electrodes together. The oxide layer is advantageously formed simultaneously with the gate oxide layer in an EEPROM.
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