Znse green light emitting diode
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United States of America Patent
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Jul 5, 1988
Grant Date -
N/A
app pub date -
Jul 5, 1983
filing date -
Jul 6, 1982
priority date (Note) -
Expired
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Abstract
A green color light emitting ZnSe diode having a pn junction is fabricated by the use of a ZnSe crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent containing at least Te and Se and using atoms of at least one kind of impurity selected from Group Ib elements of the Periodic Table as a principal impurity for producing a p type region in the crystal.
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