Programmable reference voltage generator for a read only memory
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United States of America Patent
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Jun 28, 1988
Grant Date -
N/A
app pub date -
Apr 4, 1985
filing date -
Apr 4, 1985
priority date (Note) -
Expired
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Abstract
A read only memory (ROM) includes a series of bit lines biased by a reference voltage lead (102). The reference voltage lead (102) is connected to a first reference voltage generator (100) having an output impedance of 25 ohms and a second reference voltage generator (104) having an output impedance of 75,000 ohms. When the ROM is deselected, the first reference voltage generator (100) turns off and the bit lines are biased by the second reference voltage generator (100). However, when the ROM is selected, the first reference voltage generator (100) is turned on and biases the bit lines. In this way, a ROM is provided which can operate in a low power mode without decreasing the access time when the ROM goes from a deselected state into a selected state.
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