Multi-level ECL series gating with temperature-stabilized source current
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United States of America Patent
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Jun 14, 1988
Grant Date -
N/A
app pub date -
Oct 31, 1986
filing date -
Oct 31, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a multi-level ECL series gating circuit with three levels of gating which operates over specified operating circuit voltage and operating circuit temperature ranges, provision is made for stabilizing the magnitude of the circuit source current over the operating voltage and temperature ranges by regulating the bias voltage which determines the circuit source current. The bias voltage is regulated according to the inverse of the operating temperature to account for the temperature characteristics of the base-to-emitter diode in the transistor generating the circuit current. The magnitude of the bias voltage over the temperature range never reaches a level which will send the circuit current transistor into saturation at any circuit voltage in the operating range.
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