Method of improving silicon-on-insulator uniformity
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United States of America Patent
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Apr 5, 1988
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N/A
app pub date -
Mar 30, 1987
filing date -
Mar 30, 1987
priority date (Note) -
Expired
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Abstract
A method of improving silicon-on-insulator uniformity using polishing. A polishing stop layer of substantially uniform thickness is provided having a first side which is made coplanar with a first side of a thicker layer of semiconductor material. A polishing process is applied to a second side of the semiconductor material until a second side of the polishing stop layer is encountered, such that the substantially uniform thickness of the polishing stop layer can be used to define the semiconductor material to a layer of uniform thickness.
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