Semiconductor imaging device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 16, 1988
Issued Date -
N/A
app pub date -
Jul 8, 1986
filing date -
Dec 13, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor imaging device composed of a matrix of pixels, each pixel being implemented with a single static induction transistor. Each static induction transistor includes a pair of principal electrode regions disposed facing each other through a highly resistive channel region. First and second gate regions of the conduction type opposite that of the principal electrode regions is formed in contact with the channel region and used to control the current flow between the two principal electrode regions. A capacitor is formed on at least part of the first gate region, whereby carriers generated by light exitation are stored in the first gate region. The second gate region is formed surrounding the first gate region and is common to all pixels. This construction provides a high-level output signal and good isolation between pixels, with an attendant increase in blooming resistance.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully