Electrostatic discharge protection circuit with variable limiting threshold for MOS device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 8, 1987
Grant Date -
N/A
app pub date -
Aug 2, 1985
filing date -
Aug 20, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An electrostatic discharge protection circuit is provided with a variable threshold for limiting the potential of an input signal having a given high or low voltage, and is adapted to an EPROM containing an input MOS transistor which is responsive to the input signal. The protection circuit is associated with an input terminal for receiving the input signal. The input terminal is coupled to the gate of the input MOS transistor. The protection circuit also includes a circuit element for limiting or suppressing the input signal potential at the variable threshold. The gate of the input MOS transistor receives the potential limited signal from the circuit element. The circuit element is responsive to a given threshold control potential. The variable threshold is enhanced by the given threshold control potential when a high-voltage input signal is applied to the input terminal.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully