Semiconductor radioactive ray detector
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United States of America Patent
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Sep 8, 1987
Grant Date -
N/A
app pub date -
May 24, 1984
filing date -
Jun 8, 1983
priority date (Note) -
Expired
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Abstract
In the representative radiation detectors described in the specification, an amorphous silicon layer is grown on one or both of the opposed electrode surfaces of a single crystal silicon substrate and the amorphous silicon layer extends to the side surface of the substrate. The corresponding electrode is deposited on the amorphous silicon layer. Detectors may also be made using a single crystal of Ge, GeAs or CdTe with an amorphous layer of the same or another semiconductor material.
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