Solar cells based on CuInS.sub.2
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United States of America Patent
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Aug 18, 1987
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N/A
app pub date -
May 9, 1986
filing date -
May 10, 1985
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Expired
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Abstract
Solar cells with photoanodes based on CuInS.sub.2 semiconductor material produced by specially adapted methods, permit the transformation of light into electric energy with a good efficiency. The semiconductor material according to the invention comprises inclusions of extraneous phases, namely In.sub.2 S.sub.3, In and/or Cu.sub.2-x S (0.ltoreq.x.ltoreq.1) in a concentration between 5 per thousand and 5 percent, in the CuInS.sub.2. The energy gap of this material is 1.5 eV. Working electrodes for photoelectrochemical solar cells or solid state solar cells can be constructed.
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