Method of making a planar polysilicon bipolar device
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United States of America Patent
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Aug 18, 1987
Grant Date -
N/A
app pub date -
Oct 2, 1985
filing date -
Oct 2, 1985
priority date (Note) -
Expired
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Abstract
A highly planarized integrated circuit structure having at least one bipolar device is described as well as a method of making the structure. The structure comprises a substrate having a field oxide grown thereon with openings defined therein respectively for formation of a collector contact region and a base/emitter region for a bipolar device in the substrate. All of the contacts of the bipolar device are formed using polysilicon which fills the defined openings in the field oxide resulting in a highly planarized structure.
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