Improved nonvolatile memory circuit using a dual node floating gate memory cell
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United States of America Patent
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Aug 4, 1987
Grant Date -
N/A
app pub date -
Oct 3, 1985
filing date -
Oct 3, 1985
priority date (Note) -
Expired
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Abstract
An improved nonvolatile memory has an adaptive system to regulate the charging current supplied to store data on nonvolatile storage nodes in order to provide acceptability low strain on the tunnel oxide and to compensate for process variations and change in the Fowler-Nordheim tunnel oxide transport characteristics caused by electron trapping over time.
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