Hard layer formed by incorporating nitrogen into Mo or W metal and method for obtaining this layer
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United States of America Patent
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Aug 4, 1987
Grant Date -
N/A
app pub date -
Dec 6, 1984
filing date -
Apr 18, 1983
priority date (Note) -
Expired
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Abstract
This hard layer is obtained by incorporating a maximum of 2 weight % of nitrogen in Mo or W by the technique of cathode sputtering in a nitrogen reactive medium, the temperature at which the nitrogen incorporation occurs which is in the order of 300.degree. C. preventing the nitrogen to precipitate at the grains-joints during cooling, so that the layer only comports a cubic centered Mo or W phase, thus preserving its own ductility to the metal.
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