Method of making a trench capacitor and dram memory cell
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 14, 1987
Grant Date -
N/A
app pub date -
Oct 7, 1985
filing date -
Oct 7, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of making a trench capacitor employs an N-type switchable plate formed in a P-type substrate for holding charge at either zero volts or a positive TC voltage and a P-type ground plate that fills in a trench around a memory cell, so that P-type dopant diffuses through a thin oxide insulator to form a channel stop and a pinhold short through the oxide is self-healing by the formation of a reverse-biased P-N diode that cuts off the flow of current through the pinhole.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully