Semiconductor image sensor
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United States of America Patent
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Jun 16, 1987
Grant Date -
N/A
app pub date -
May 9, 1984
filing date -
Sep 9, 1982
priority date (Note) -
Expired
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Abstract
A semiconductor image sensor is formed by static induction transistors, each provided with a control gate region which is a first gate region for control use and a shielding gate region which is a second gate region. The distance between an n.sup.+ source region and the control gate region is larger than the distance between the n.sup.+ source region and the shielding gate region. It is also possible to adopt such a structure that a light-shielding mask is provided on the shielding gate region. The isolation of adjacent photoconductive cells and the integration of adjacent photoconductive cells are improved, and the integration density is sharply increased.
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