Sense amplifier for a dynamic RAM
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United States of America Patent
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-
May 26, 1987
Grant Date -
N/A
app pub date -
Dec 30, 1982
filing date -
Dec 30, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A single ended sense amplifier (10) receives a bit line signal (16) at the gate of a detector MOS transistor (36). The source of the detector transistor (36) is connected to a reference voltage (24) which is adjusted prior to each memory cycle to make the gate to source voltage of the detector transistor (36) equal to the approximate threshold voltage of the transistor. The drain of the detector transistor (36) gates an amplifier transistor (30) which inhibits or passes a read signal (18) to the gate of a digit line pull down transistor (32) which provides an active pull down on a digit line (26) that is precharged to a high voltage prior to a memory read cycle.
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