NPN transistor with base double doped with arsenic and boron
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United States of America Patent
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May 19, 1987
Issued Date -
N/A
app pub date -
Nov 19, 1980
filing date -
Jun 9, 1977
priority date (Note) -
Expired
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Abstract
A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.
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