Forming deep buried grids of implanted zones being vertically and laterally offset by mask MEV implant
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United States of America Patent
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May 12, 1987
Grant Date -
N/A
app pub date -
Feb 7, 1985
filing date -
Feb 8, 1984
priority date (Note) -
Expired
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Abstract
A buried grid structure is produced in a semiconductor material particularly a silicon wafer, while using a metallic grid mask. The buried grid is formed directly within the semiconductor material by contradoping ion implantation by means of a high energy accelerator through the metallic grid mask. The bars or ribs of the metallic grid mask stop the ions passing therethrough so that two vertically separated and laterally offset buried grid structures are produced. By beveling the periphery of the wafer, buried conductive structures are formed at the same time as connections between the buried grid structures and a control electrode provided on the back side of the wafer.
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