Method for thin film formation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 14, 1987
Grant Date -
N/A
app pub date -
Apr 17, 1985
filing date -
Apr 18, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for forming a thin film on a substrate, which comprises aligning an evaporation means for an evaporating material to be deposited on the substrate, a plasma generating zone for dissociating an ion-forming gas into ions and electrons, an ion beam accelerating zone for accelerating the resulting ions and irradiating them onto the substrate, and said substrate on a substantially straight line in the order stated, and depositing a vapor of the evaporating material on the substrate through the plasma generating zone and the ion beam accelerating zone. According to this method, surface irradiation can be carried out uniformly because the ion species and the vapor atoms are irradiated in quite the same direction. Furthermore, the vapor atoms can be activated to a high degree, and the by-product electrons can be effectively utilized for the evaporation of the evaporant.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully