Reflective, thin film transistor addressed, matrix liquid crystal display
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United States of America Patent
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Feb 17, 1987
Grant Date -
N/A
app pub date -
May 25, 1983
filing date -
May 26, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A matrix liquid crystal display device comprising a reflecting plate and a polarizing plate coated on an insulating substrate, a thin film transistor arranged on the insulating substrate in matrix configuration, and a liquid crystal sandwiched between the insulating substrate and a glass plate. A cross-talk between picture elements caused by transmission or reflection of light on the substrate is prevented. The thin film transistor is formed by a semiconductor film made of amorphous silicon or a gate insulating film made of silicon dioxide which is easily formed at low temperature under 40.degree. C. by plasma CVD method or the like.
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