Thermosensitive semiconductor device using Darlington circuit
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United States of America Patent
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Jan 27, 1987
Grant Date -
N/A
app pub date -
Aug 31, 1982
filing date -
Sep 1, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A thermosensitive semiconductor device has a semiconductor substrate of one conductivity type which is used as the common collector of at least two Darlington-connected transistors. The base of the first stage transistor is connected to the common collector to form a first terminal and the emitter of the final stage transistor forms a second terminal. A constant current source is connected between the first and second terminals. To reduce deviations in the temperature response, a second collector region can be used and which can extend to a depth deeper than the depth of the emitter of the final stage transistor to absorb some of the carriers injected by the emitter.
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