MIS-integrated semiconductor device
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United States of America Patent
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Jan 6, 1987
Issued Date -
N/A
app pub date -
Feb 19, 1986
filing date -
Oct 28, 1981
priority date (Note) -
Expired
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Abstract
The present invention aims to form a MOST, for example a MOS-SIT, whose impurity density in a channel region is lower than an ordinary MOST on a substrate or is formed in an epitaxial growth layer on a well.
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