Method of producing II-V compound semiconductors
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United States of America Patent
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Dec 16, 1986
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N/A
app pub date -
Mar 5, 1985
filing date -
Mar 8, 1984
priority date (Note) -
Expired
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Abstract
A method of producing II-V compound semiconductors with greatly reduced intrinsic defect levels comprises the step of causing atoms or ions of at least one member selected from the group consisting of hydrogen and the halogens to be injected into and diffused through II-V compound semiconductors during or after the production thereof.
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