Process for forming a doped oxide film and composite article
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United States of America Patent
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Oct 28, 1986
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N/A
app pub date -
Jan 27, 1986
filing date -
Jan 28, 1982
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Abstract
A process for forming a doped oxide film suitable for doping a semiconductor wafer substrate material and composite article. A silicon tetra-alkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorganosiloxane is subsequently admixed with a reactive dopant source to form a soluble metallosiloxane polymer. The metallosiloxane polymer is coated onto a semiconductor wafer substrate material to produce a metallosiloxane-wafer composite article. The composite article is heated to produce an impurity doped semiconductor wafer suitable for electronic applications.
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