Method of manufacturing a Group II-VI semiconductor device having a PN junction
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United States of America Patent
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Oct 28, 1986
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app pub date -
Jul 10, 1984
filing date -
Jun 12, 1980
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Abstract
A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI element. Thus, the concentration of vacancies and other defects acting as donor is reduced as compared with the concentration of the p type impurity to be introduced. This invention is suitable for producing light-emitting diodes emitting a light of short-wave lengths.
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