Process for producing high-purity metal targets for LSI electrodes
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United States of America Patent
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Oct 28, 1986
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N/A
app pub date -
Jul 26, 1984
filing date -
Sep 22, 1983
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Expired
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Abstract
A high-purity high-melting metal target or high-purity high-melting metal silicide target for LSI electrodes having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb is provided by a wet purification process followed by a series of dry processings. Preferably the high-melting metal is molybdenum, tungsten, titanium, niobium or tantalum. More preferably, the high-melting metal is molybdenum.
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