Method of manufacturing a semiconductor device
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United States of America Patent
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-
Oct 28, 1986
Issued Date -
N/A
app pub date -
Nov 19, 1985
filing date -
May 31, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of manufacturing a semiconductor device is disclosed. In the manufacturing method, an impurity diffusion layer as a first interconnection layer is formed on a semiconductor substrate. Then, an aluminum layer as a second interconnection layer is formed on the semiconductor substrate with an insulating film interposing therebetween. Another insulating layer is further formed on the aluminum layer. An anisotropic etching process is applied to the insulating layer, the second interconnection layer, and the insulating film, thereby forming a contact extending up to the first interconnection layer through these layers, and the insulating film. After the formation of the contact hole, an aluminum layer is formed on the entire surface of the insulating film including the inner surface of the contact hole. The aluminum layer formed in the contact hole electrically interconnects the first and second interconnecting layers.
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