Non-volatile semiconductor memory
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United States of America Patent
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Oct 7, 1986
Grant Date -
N/A
app pub date -
Sep 30, 1982
filing date -
Oct 14, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In the non-volatile semiconductor memory of present invention, a select gate and a floating gate are formed on the surface portion of the substrate between a source region and the drain region also acting as a control gate through a gate oxide film. A part of a channel current is injected into the floating gate at the surface portion under the edge of the floating gate covered by the select gate.
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