Semiconductor radiation detector
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United States of America Patent
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Sep 9, 1986
Grant Date -
N/A
app pub date -
Aug 14, 1984
filing date -
Aug 26, 1983
priority date (Note) -
Expired
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Abstract
In the specific embodiments described in the specification, a semiconductor radiation detector has a single-crystal silicon substrate coated with an amorphous silicon film containing an impurity to widen the mobility band gap of the semiconductor to reduce the reverse bias leakage current. Phosphorus and carbon are disclosed as impurities for the amorphous silicon film.
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