Semiconductor memory device

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United States of America Patent

PATENT NO 4587638
SERIAL NO

06630115

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Abstract

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In the semiconductor memory device according to the present invention, when there is a defective portion in the memory cells, those memory cells are replaced by redundant memory cells. When defective portions are discovered in the memory cells, the fuse elements corresponding to the memory cells having the defective portions are cut off. Voltages of the select lines connected to the memory cells having the defective portions are held at an L level by the resistors. Due to this, the memory cells having the defective portions are not selected.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA 72 HORIKAWA-CHO SAIWAI-KU KAWASAKI-SHI JAPAN A CORP OF JAPANNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aono, Akira Tokyo, JP 18 114
Iizuka, Tetsuya Funabashi, JP 114 1565
Isobe, Mitsuo Yokohama, JP 32 444
Ohtani, Takayuki Tokyo, JP 24 279
Sakurai, Takayasu Tokyo, JP 50 849
Sawada, Kazuhiro Yokohama, JP 29 166

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