Process for preparing ZnSe single crystal
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United States of America Patent
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Apr 22, 1986
Grant Date -
N/A
app pub date -
Jun 22, 1984
filing date -
Jun 29, 1983
priority date (Note) -
Expired
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Abstract
A process for preparing a large ZnSe single crystal, comprising vacuum sealing polycrystalline ZnSe prepared by a chemical vapor deposition in a capable and hot isostatically pressing polycrystalline ZnSe in the capsule, by which the ZnSe single crystal having such high qualities as to be used as a substrate on which an epitaxial layer of ZnSe can be grown.
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