One-dimensional semiconductor imaging device
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United States of America Patent
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Mar 4, 1986
Grant Date -
N/A
app pub date -
Dec 13, 1983
filing date -
Dec 13, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A one-dimensional semiconductor imaging device in which each pixel in a linear array of devices is composed of but one transistor. The single transistor is an SIT (Static Induction Transistor) including a pair of principal electrode regions of one conduction type formed facing one another through a highly resistive channel region, and first and second gate regions of the other conduction type formed in contact with the channel region to control the current flowing between the two principal electrode regions. A transparent electrode is formed on at least one part of the first gate electrode through a capacitor. One of the two principal electrode regions, which are both common to all pixels, is connected to a video signal output terminal through a switch. The first gate region of each SIT is connected to a dedicated output through a capacitor.
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