Importance

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Abstract

A two-dimensional solid-state image sensor device, comprising: a plurality of picture cells which are two-dimensionally arranged in column and row directions, and each of which comprises a static induction transistor having drain and source regions with one conductivity type which are disposed on opposite sides of a high resistance semiconductor channel region, and control and shielding gate regions with the other conductivity type which are adjacent to the channel region to control a current flowing between the drain and source regions, and a transparent electrode disposed via a capacitance on at least a portion of the control gate region, in a manner that light is incident through the transparent electrode to the control gate region in which the charge produced by the light excitation is stored to control the current; a plurality of selection lines, each of which connects the control gate regions in each column in common via the capacitances; and a plurality of signal readout lines, each of which connects the drain or source regions in each row in common. Each picture cell is selected in the column and row directions so that a signal is read out therefrom. The shielding gate regions are electrically connected in common in the column or row direction and electrically isolated in the remaining direction so that voltages are independently applied to the pixels.

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First Claim