Ballistic transport-type semiconductor device for deflecting electrons
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United States of America Patent
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Jan 7, 1986
Grant Date -
N/A
app pub date -
Jan 20, 1982
filing date -
Jan 27, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device having a structure originating from field effect transistors of a vertical configuration type in which a deflection is brought about between the electrons so as to be able to switch in an ultra-rapid manner a current or signal, or produce a phase shift. In a very thin monocrystalline gallium arsenide film, a certain number of cells are produced for this purpose and each of them includes a cathode, a first gate electrode embedded in the semiconductor material, a second gate electrode and at least one anode electrode serving as a target for the ballistic electrons. The electron beam is deflected as a function of the different polarizations applied to the gate electrodes.
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