Semiconductor image sensor
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United States of America Patent
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Dec 31, 1985
Grant Date -
N/A
app pub date -
Aug 16, 1983
filing date -
Dec 17, 1981
priority date (Note) -
Expired
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Abstract
A semiconductor image sensor which has photocells arranged in a matrix form is miniaturized and integrated with high density, thereby to increase its light amplification factor and operating speed. To this end, each photocell is formed by a static induction transistor which has a pair of main electrodes, a channel region formed between the main electrodes and a capacitor connected between a control region serving as a photocell and one of the row lines.
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