Method of manufacturing a semiconductor device
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United States of America Patent
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Dec 24, 1985
Issued Date -
N/A
app pub date -
Jul 19, 1984
filing date -
Aug 27, 1976
priority date (Note) -
Expired
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Abstract
A method of manufacturing a semiconductor device which comprises the step of applying a silicon carbide film having a prescribed perforated pattern as a masking film selectively to etch a silicon dioxide film or diffuse an impurity into a substrate.
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