PIN semiconductor photoelectric conversion device with two oxide layers
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United States of America Patent
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Dec 17, 1985
Grant Date -
N/A
app pub date -
May 24, 1983
filing date -
May 24, 1982
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Expired
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Abstract
A PIN type semiconductor photoelectric conversion device is provided with a non-single-crystal semiconductor laminate member which comprises a first non-single-crystal semiconductor layer of a first conductivity, on I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer of a second conductivity type, and first and second electrodes which make ohmic contact with the first and third non-single-crystal semiconductor layers, respectively. The first non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member is formed by a non-single-crystal semiconductor layer on the side of incidence of light. And the second electrode is formed by a reflective electrode.
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