Method of making integrated PNP and NPN bipolar transistors and junction field effect transistor
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United States of America Patent
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Nov 19, 1985
Grant Date -
N/A
app pub date -
May 2, 1983
filing date -
May 2, 1983
priority date (Note) -
Expired
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Abstract
A semiconductor device and method for making same having three transistors, NPN, PNP, and junction field effect, concurrently formed integral to a common semiconductor device.
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