Method of fabricating a semiconductor pn junction
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United States of America Patent
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Jul 2, 1985
Issued Date -
N/A
app pub date -
Feb 9, 1983
filing date -
Jun 16, 1980
priority date (Note) -
Expired
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Abstract
A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in a Group IIB-VIB compound semiconductor crystal obtained by relying on a crystal growth method in liquid phase using a temperature difference technique, and subjecting this crystal to a thermal annealing in a Zn solution or in a Zn atmosphere to produce an n type region. Crystal growth is conducted while controlling the vapor pressure of the constituent Group IVB element to produce a p type region. A combination of all these steps gives a more stable pn junction.
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