Method for fabricating semiconductor photodetector
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United States of America Patent
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Mar 5, 1985
Grant Date -
N/A
app pub date -
Dec 13, 1983
filing date -
Dec 13, 1982
priority date (Note) -
Expired
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Abstract
A method for fabricating a photodetector device including a single pixel or an array of pixels, each of which is constituted by a single vertical type SIT (Static Induction Transistor). First and second main electrode regions are formed on respective first and second main surfaces of a silicon wafer. Control gate and shielding gate regions, as well as drain and source regions as well, are formed using a single common masking step. As a result, the formation of these regions is precisely controlled, resulting in superior photoresponse characteristics.
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