Shortwave semiconductor laser
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United States of America Patent
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Jan 15, 1985
Grant Date -
N/A
app pub date -
Jun 16, 1982
filing date -
Jun 19, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A laser diode having an active layer which has a composition: Ga.sub.x In.sub.1-x P with: 0.51.ltoreq.x.ltoreq.0.53 corresponding to a point of the straight line of the quaternary diagram GaInAsP which satisfies the condition of compatability of the crystal lattice parameter with that of a GaAs substrate. The confinement layers of the laser diode have a composition corresponding to a point of the straight line of the adjacent quaternary diagram GaAlInP which satisfies the condition of compatability of the crystal lattice parameter with that of the GaAs substrate, namely in respect of that point of said straight line which is located at the most favorable end of the line: In.sub.z Al.sub.1-z P with: 0.45.ltoreq.z.ltoreq.0.49.
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