Photosensitive member
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United States of America Patent
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Jan 1, 1985
Grant Date -
N/A
app pub date -
Mar 7, 1983
filing date -
Mar 31, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention disclosed relates to a photosensitive member having excellent photosensitivity characteristics in the visible light region as well as in the near infrared region. According to first embodiment of the invention, the photosensitive member comprises an electrically conductive substrate, an amorphous silicon-germanium photoconductive layer having a thickness of about 0.1 to 3 microns, and an amorphous silicon photoconductive layer of 5 to 30 micron thick formed on the amorphous silicon-germanium photoconductive layer. Second embodiment of the photosensitive member comprises a substrate, an amorphous silicon semiconductor layer of 5 to 100 micron thick and an amorphous silicon-germanium photoconductive layer formed on the amorphous silicon semiconductor layer.
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